OmniChip Technology
  • IRLML6401
  • IRLML6401
  • IRLML6401
  • IRLML6401
  • IRLML6401
  • IRLML6401
  • IRLML6401
  • IRLML6401
  • IRLML6401
  • IRLML6401

IRLML6401

IRLML6401 is a Trench DMOS P-channel power MOSFET offering low RDS(ON), fast switching, and high avalanche energy resistance for high-efficiency power applications.

  • Channel Configuration:Single P Channel
  • Drain-Source Voltage (Vdss):12V
  • Continuous Drain Current (Id):4.3A
  • Drain-Source On-Resistance (RDS(on)):40mΩ@4.5V
  • Power Dissipation (Pd):1.56W
  • Package:SOT-23
  • Packaging Type:Tape&Reel

USD 0.04

4900

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Supplier Information

Email:[email protected]

Tel:15670610275

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