OmniChip Technology
  • TPH1R403NL
  • TPH1R403NL
  • TPH1R403NL
  • TPH1R403NL
  • TPH1R403NL
  • TPH1R403NL
  • TPH1R403NL
  • TPH1R403NL
  • TPH1R403NL
  • TPH1R403NL

TPH1R403NL

This N-MOSFET features 3.3mΩ RDS(on) at 4.5V, 46nC low gate charge, and fast switching for efficient power conversion and battery management.

  • Drain-Source Voltage (Vdss) :30V
  • Continuous Drain Current (Id) :150A
  • On-Resistance (RDS(on)) :[email protected]
  • Power Dissipation (Pd):75W
  • Input capacitance (Ciss) :5.93nF
  • Reverse transfer capacitance (Crss) :220pF
  • Working temperature:-55°C~+150°C
  • Package Type :PowerDFN-8(5x6)​
  • Packaging Method :Tape & Reel
  • Gross Weight :0.3569(g)

USD 0.3328

18000

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Supplier Information

Email:[email protected]

Tel:15670610275

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