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OmniChip Technology
GuaranTee Supplier
11 Years
SI2309CDS
This P-MOSFET features low on-resistance at -4.5V gate drive, fast switching, and reliable performance for battery protection.
- Drain-Source Voltage (Vdss) ：60V
- Continuous Drain Current (Id) ：1.6A
- On-Resistance (RDS(on)) ：240mΩ@4.5V
- Power Dissipation (Pd)：1.5W
- Input capacitance (Ciss) ：444.2pF
- Reverse transfer capacitance (Crss) ：17.9pF
- Working temperature：-55°C~+150°C
- Package Type ：SOT-23-3
- Packaging Method ：Tape & Reel
- Gross Weight ：0.028(g)
USD 0.0876
18000
Supplier Information
Email：[email protected]
Tel：15670610275
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