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OmniChip Technology
GuaranTee Supplier
11 Years
BSS138LT1G
This N-MOSFET features ESD-protected gate, fast switching speed, low gate charge, and reliable performance for DC-DC converters and power management.
- Drain-Source Voltage (Vdss) ：50V
- Continuous Drain Current (Id) ：360mA
- On-Resistance (RDS(on)) ：4.5Ω@2.5V
- Power Dissipation (Pd)：350mW
- Input capacitance (Ciss) ：32pF
- Reverse transfer capacitance (Crss) ：3pF
- Working temperature：-55°C~+150°C
- Package Type ：SOT-23
- Packaging Method ：Tape & Reel
- Gross Weight ：0.0311(g)
USD 0.0192
19000
Supplier Information
Email：[email protected]
Tel：15670610275
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