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OmniChip Technology
GuaranTee Supplier
11 Years
BSH103
This N-MOSFET features very low threshold voltage, direct C-MOS/TTL interface, fast switching speed, and 2kV ESD protection for battery-powered systems.
- Drain-Source Voltage (Vdss) ：30V
- Continuous Drain Current (Id) ：850mA
- On-Resistance (RDS(on)) ：650mΩ@2.5V
- Power Dissipation (Pd)：360mW
- Input capacitance (Ciss) ：146pF
- Reverse transfer capacitance (Crss) ：14.8pF
- Working temperature：-55℃~+150℃
- Package Type ：SOT-23
- Packaging Method ：Tape & Reel
- Gross Weight ：0.031233(g)
USD 0.0335
19000
Supplier Information
Email：[email protected]
Tel：15670610275
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