OmniChip Technology
  • 5N06S-MS
  • 5N06S-MS
  • 5N06S-MS
  • 5N06S-MS
  • 5N06S-MS
  • 5N06S-MS
  • 5N06S-MS
  • 5N06S-MS
  • 5N06S-MS
  • 5N06S-MS

5N06S-MS

5N06S-MS is a high-cell-density trench N-channel MOSFET offering low RDS(ON) and high efficiency for small-power switching and load switch applications.

  • Channel Configuration：Single N Channel
  • Drain-Source Voltage (Vdss)：60V
  • Continuous Drain Current (Id)：5A
  • Drain-Source On-Resistance (RDS(on))：80mΩ@10V
  • Power Dissipation (Pd)：1.5W
  • Package：SOT-223
  • Packaging Type：Tape&Reel

USD 0.08

2300

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Supplier Information

Email：[email protected]

Tel：15670610275

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