OmniChip Technology
  • SI7619DN-T1-GE3-MS
  • SI7619DN-T1-GE3-MS
  • SI7619DN-T1-GE3-MS
  • SI7619DN-T1-GE3-MS
  • SI7619DN-T1-GE3-MS
  • SI7619DN-T1-GE3-MS
  • SI7619DN-T1-GE3-MS
  • SI7619DN-T1-GE3-MS
  • SI7619DN-T1-GE3-MS
  • SI7619DN-T1-GE3-MS

SI7619DN-T1-GE3-MS

SI7619DN-T1-GE3-MS is a 30V, 25A P-channel MOSFET in a DFN3x3-8L package, featuring 16mΩ RDS(ON) for efficient power conversion and battery management.

  • Channel Configuration:Single P Channel
  • Drain-Source Voltage (Vdss):30V
  • Continuous Drain Current (Id):25A
  • Drain-Source On-Resistance (RDS(on)):16mΩ@10V
  • Power Dissipation (Pd):29W
  • Package:DFN-8L(3x3)
  • Packaging Type:Tape&Reel

USD 0.28

900

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Supplier Information

Email:[email protected]

Tel:15670610275

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