OmniChip Technology
  • MSG80N350FL
  • MSG80N350FL
  • MSG80N350FL
  • MSG80N350FL
  • MSG80N350FL
  • MSG80N350FL
  • MSG80N350FL
  • MSG80N350FL
  • MSG80N350FL
  • MSG80N350FL

MSG80N350FL

MSG80N350FL is a high-current IGBT featuring low VCE(sat) of 1.58V at 80A and high input impedance, suitable for PDP TVs and power switching applications.

  • IGBT Technology:-
  • Power Dissipation (Pd):420W
  • Collector-Emitter Breakdown Voltage (VCES):330V
  • Continuous Collector Current (IC):80A
  • Pulsed Collector Current (ICM):450A
  • Package:TO-247
  • Packaging Type:Tube

USD 2.49

23

contact shop

Supplier Information

Email:[email protected]

Tel:15670610275

Recommended products

IRLML9301TR(UMW)

IRLML9301TR is a trench MOSFET featuring low RDS(on), low gate charge, and 2.5V gate drive capability, ideal for load switching applications.

collect:0

IRFR5505TR(UMW)

IRFR5505TR is a -60V P-channel trench MOSFET rated at -10A, featuring low RDS(on), low gate charge, and 4.5V gate drive capability.

collect:0

2N7002B

2N7002B is an N-channel MOSFET featuring low RDS(on), high saturation current capability, and reliable voltage-controlled switching for portable load switches and DC/DC converters.

collect:0

STP4925A(UMW)

STP4925A is a dual P-channel logic-level power MOSFET featuring DMOS trench technology and low RDS(on) for efficient power switching.

collect:0