GuaranTee Supplier
11 Years
MSG50T65QHC0
MSG50T65QHC0 is a 650V field-stop IGBT with 1.8V typical VCE(sat), 10μs short-circuit withstand capability and square reverse-bias SOA, ideal for inverters.
- IGBT Technology:Field Stop (FS)
- Power Dissipation (Pd):394W
- Collector-Emitter Breakdown Voltage (VCES):650V
- Continuous Collector Current (IC):100A
- Pulsed Collector Current (ICM):200A
- Package:TO-247
- Packaging Type:Tube
USD 2.37
24
Supplier Information
Email:[email protected]
Tel:15670610275
Recommended products
IRLML9301TR(UMW)
IRLML9301TR is a trench MOSFET featuring low RDS(on), low gate charge, and 2.5V gate drive capability, ideal for load switching applications.
collect:0
IRFR5505TR(UMW)
IRFR5505TR is a -60V P-channel trench MOSFET rated at -10A, featuring low RDS(on), low gate charge, and 4.5V gate drive capability.
collect:0
2N7002B
2N7002B is an N-channel MOSFET featuring low RDS(on), high saturation current capability, and reliable voltage-controlled switching for portable load switches and DC/DC converters.
collect:0
STP4925A(UMW)
STP4925A is a dual P-channel logic-level power MOSFET featuring DMOS trench technology and low RDS(on) for efficient power switching.
collect:0









