Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
IGW50N65H5AXKSA1-HXY
IGW50N65H5AXKSA1-HXY is a 650V 50A IGBT module with 1.6V VCE(sat) and an integrated 50A diode, offering low loss and reliable high-frequency switching.
- IGBT Technology：-
- Power Dissipation (Pd)：250W
- Collector-Emitter Breakdown Voltage (VCES)：650V
- Continuous Collector Current (IC)：80A
- Pulsed Collector Current (ICM)：200A
- Package：Tube
- Packaging Type：Tube
USD 4.88
17
Supplier Information
Email：[email protected]
Tel：15670610275
Recommended products
IRLML9301TR(UMW)
IRLML9301TR is a trench MOSFET featuring low RDS(on), low gate charge, and 2.5V gate drive capability, ideal for load switching applications.
collect：0
IRFR5505TR(UMW)
IRFR5505TR is a -60V P-channel trench MOSFET rated at -10A, featuring low RDS(on), low gate charge, and 4.5V gate drive capability.
collect：0
2N7002B
2N7002B is an N-channel MOSFET featuring low RDS(on), high saturation current capability, and reliable voltage-controlled switching for portable load switches and DC/DC converters.
collect：0
STP4925A(UMW)
STP4925A is a dual P-channel logic-level power MOSFET featuring DMOS trench technology and low RDS(on) for efficient power switching.
collect：0