Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
FDS6681Z(UMW)
FDS6681Z(UMW) is a -30V MOSFET with 18A current capability, ultra-low RDS(on) of 5mΩ at 10V and low gate charge, ideal for battery management and charging.
- Channel Configuration：Single P-Channel
- Drain-Source Voltage (VDS)：30V
- Continuous Drain Current (ID)：18A
- Drain-Source On-Resistance (RDS(on))：5mΩ@10V；8mΩ@4.5V
- Power Dissipation (PD)：5.6W
- Package：2.2V
- Packaging Type：Tape&Reel
USD 0.24
10000
Supplier Information
Email：[email protected]
Tel：15670610275
Recommended products
FDN327N(UMW)
FDN327N is an N-channel power MOSFET featuring high-voltage PowerTrench technology, optimized for power management applications.
collect：0
IRF9Z34N(UMW)
P-channel power MOSFET featuring low on-resistance and high current capability, suitable for power switching and power management applications.
collect：0
IRFB7437PBF(UMW)
IRFB7437PBF(UMW) is a 40V, 195A N-channel MOSFET featuring ultra-low RDS(ON) below 2mΩ for high-current power switching applications.
collect：0
NTD5867NLT4G(UMW)
NTD5867NLT4G(UMW) is a 60V, 20A N-channel MOSFET featuring low RDS(ON) and high current capability for efficient power switching.
collect：0