OmniChip Technology
  • FDN358P(UMW)
  • FDN358P(UMW)
  • FDN358P(UMW)
  • FDN358P(UMW)
  • FDN358P(UMW)
  • FDN358P(UMW)
  • FDN358P(UMW)
  • FDN358P(UMW)
  • FDN358P(UMW)
  • FDN358P(UMW)

FDN358P(UMW)

FDN358P(UMW) is a 30V P-channel MOSFET with low RDS(on), suitable for load switching, power management, battery charging and DC/DC conversion in portable electronics.

  • Channel Configuration:Single P Channel
  • Drain-Source Voltage (VDS):30V
  • Continuous Drain Current (ID):1.5A
  • Drain-Source On-Resistance (RDS(on)):76mΩ@10V
  • Power Dissipation (PD):500mW
  • Package:SOT-23
  • Packaging Type:Tape&Reel

USD 0.04

3900

contact shop

Supplier Information

Email:[email protected]

Tel:15670610275

Recommended products

IRLML9301TR(UMW)

IRLML9301TR is a trench MOSFET featuring low RDS(on), low gate charge, and 2.5V gate drive capability, ideal for load switching applications.

collect:0

IRFR5505TR(UMW)

IRFR5505TR is a -60V P-channel trench MOSFET rated at -10A, featuring low RDS(on), low gate charge, and 4.5V gate drive capability.

collect:0

2N7002B

2N7002B is an N-channel MOSFET featuring low RDS(on), high saturation current capability, and reliable voltage-controlled switching for portable load switches and DC/DC converters.

collect:0

STP4925A(UMW)

STP4925A is a dual P-channel logic-level power MOSFET featuring DMOS trench technology and low RDS(on) for efficient power switching.

collect:0