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OmniChip Technology
GuaranTee Supplier
11 Years
IPD068N10N3G(UMW)
IPD068N10N3G is a 100V 90A N-channel MOSFET with ultra-low 6.8mΩ RDS(on), a low gate charge FOM, and 175°C operation for high-frequency switching and synchronous rectification.
- Channel Configuration：Single N Channel
- Drain-Source Voltage (VDS)：100V
- Continuous Drain Current (ID)：90A
- Drain-Source On-Resistance (RDS(on))：5.7mΩ@10V
- Power Dissipation (PD)：150W
- Package：TO-252
- Packaging Type：Tape&Reel
USD 0.51
380
Supplier Information
Email：[email protected]
Tel：15670610275
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