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OmniChip Technology
GuaranTee Supplier
11 Years
FQD7N10LTM(UMW)
FQD7N10LTM is an N-channel enhancement-mode power MOSFET featuring low RDS(on), fast switching, and high avalanche energy capability for power control applications.
- Channel Configuration：Single P Channel
- Drain-Source Voltage (VDS)：100V
- Continuous Drain Current (ID)：5.8A
- Drain-Source On-Resistance (RDS(on))：275mΩ@10V
- Power Dissipation (PD)：25W
- Package：TO-252
- Package：Tape&Reel
USD 0.15
13000
Supplier Information
Email：[email protected]
Tel：15670610275
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