OmniChip Technology
  • IRF9Z34N(UMW)
  • IRF9Z34N(UMW)
  • IRF9Z34N(UMW)
  • IRF9Z34N(UMW)
  • IRF9Z34N(UMW)
  • IRF9Z34N(UMW)
  • IRF9Z34N(UMW)
  • IRF9Z34N(UMW)
  • IRF9Z34N(UMW)
  • IRF9Z34N(UMW)

IRF9Z34N(UMW)

P-channel power MOSFET featuring low on-resistance and high current capability, suitable for power switching and power management applications.

  • Channel Configuration:Single P Channel
  • Drain-Source Voltage (VDS):55V
  • Continuous Drain Current (ID):19A
  • Drain-Source On-Resistance (RDS(on)):100mΩ@10V
  • Power Dissipation (PD):450mW
  • Package:TO-220
  • Packaging Type:Tube

USD 0.3

400

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Supplier Information

Email:[email protected]

Tel:15670610275

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