OmniChip Technology
  • 2SK3018 N-Channel MOSFET 30V 0.1A SOT-23 Trench Power Technology
  • 2SK3018 N-Channel MOSFET 30V 0.1A SOT-23 Trench Power Technology
  • 2SK3018 N-Channel MOSFET 30V 0.1A SOT-23 Trench Power Technology
  • 2SK3018 N-Channel MOSFET 30V 0.1A SOT-23 Trench Power Technology
  • 2SK3018 N-Channel MOSFET 30V 0.1A SOT-23 Trench Power Technology
  • 2SK3018 N-Channel MOSFET 30V 0.1A SOT-23 Trench Power Technology
  • 2SK3018 N-Channel MOSFET 30V 0.1A SOT-23 Trench Power Technology
  • 2SK3018 N-Channel MOSFET 30V 0.1A SOT-23 Trench Power Technology
  • 2SK3018 N-Channel MOSFET 30V 0.1A SOT-23 Trench Power Technology
  • 2SK3018 N-Channel MOSFET 30V 0.1A SOT-23 Trench Power Technology

2SK3018 N-Channel MOSFET 30V 0.1A SOT-23 Trench Power Technology

2SK3018 N-channel MOSFET with 30V/0.1A, low RDS(ON) <8Ω, trench technology, SOT-23.

  • Drain-Source Voltage (Vdss):30V
  • Continuous Drain Current (Id):100mA
  • On-Resistance (RDS(on)):8Ω@4V;13Ω@2.5V
  • Product packaging :SOT-23
  • Packing Method :Tape & Reel
  • Gross Weight:0.030333(g)

USD 0.024

15000

contact shop

Product Images

Datasheet PDF

Enlarge View Download PDF

Supplier Information

Email:[email protected]

Tel:15670610275

Recommended products

MMDT3904

MMDT3904 is an NPN transistor with an epitaxial planar die structure, designed for low-power amplification and switching applications.

collect:0

SS8550(RANGE:200-350)

SS8550 is a PNP transistor with 200–350 hFE and high collector current, complementary to SS8050 for switching, amplification and power control applications.

collect:0

BC847(RANGE:200-450)

BC847 is an NPN transistor with 200–450 hFE, suitable for automatic insertion, switching and audio amplifier applications.

collect:0

SS8550(RANGE:120-200)

SS8550 is a 25V 1.5A PNP transistor with 120–200 hFE, suitable for general-purpose switching, amplification and high-current electronic applications.

collect:0