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OmniChip Technology
GuaranTee Supplier
11 Years
BSS123 Low On-Resistance N-MOSFET 100V High Density Cell Design SOT-23
BSS123 N-channel MOSFET with 100V/170mA, low RDS(ON) <6Ω, trench technology, SOT-23.
- Drain-Source Voltage (Vdss)：100V
- Continuous Drain Current (Id)：170mA
- On-Resistance (RDS(on))：6Ω@10V；10Ω@4.5V
- Product packaging ：SOT-23
- Packing Method ：Tape & Reel
- Gross Weight：0.036(g)
USD 0.019
15000
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Tel：15670610275
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