OmniChip Technology
  • HB10N200S N-Channel MOSFET 100V 45A TO-252 Low RDS(ON) 14mΩ SGT
  • HB10N200S N-Channel MOSFET 100V 45A TO-252 Low RDS(ON) 14mΩ SGT
  • HB10N200S N-Channel MOSFET 100V 45A TO-252 Low RDS(ON) 14mΩ SGT
  • HB10N200S N-Channel MOSFET 100V 45A TO-252 Low RDS(ON) 14mΩ SGT
  • HB10N200S N-Channel MOSFET 100V 45A TO-252 Low RDS(ON) 14mΩ SGT
  • HB10N200S N-Channel MOSFET 100V 45A TO-252 Low RDS(ON) 14mΩ SGT
  • HB10N200S N-Channel MOSFET 100V 45A TO-252 Low RDS(ON) 14mΩ SGT
  • HB10N200S N-Channel MOSFET 100V 45A TO-252 Low RDS(ON) 14mΩ SGT
  • HB10N200S N-Channel MOSFET 100V 45A TO-252 Low RDS(ON) 14mΩ SGT
  • HB10N200S N-Channel MOSFET 100V 45A TO-252 Low RDS(ON) 14mΩ SGT

HB10N200S N-Channel MOSFET 100V 45A TO-252 Low RDS(ON) 14mΩ SGT

HB10N200S N-channel MOSFET with 100V/45A, ultra-low 14mΩ RDS(ON), SGT technology, TO-252.

  • Drain-Source Voltage (Vdss) ：100V
  • Continuous Drain Current (Id) ：45A
  • On-Resistance (RDS(on))：14mΩ@10V
  • Product packaging ：TO-252​
  • Packing Method ：Tape & Reel
  • Gross Weight：1(g)

USD 0.23

16000

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Supplier Information

Email：[email protected]

Tel：15670610275

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