Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
NCE10TD60BK
NCE10TD60BK 600V Trench FSII IGBT delivers low conduction loss, fast switching, excellent efficiency and reliable parallel operation for industrial power applications.
- IGBT Technology：Field Stop (FS)
- Power Dissipation (Pd)：83 W
- Collector-Emitter Breakdown Voltage (VCES)：600 V
- Collector-Emitter Saturation Voltage (VCE(sat))：1.9 V @ 10 A, VGE=15 V
- Continuous Collector Current (IC)：20 A
- Package：TO-252-2
- Packaging Type：Tape&Reel
USD 0.96
2400
Supplier Information
Email：[email protected]
Tel：15670610275
Recommended products
FDN327N(UMW)
FDN327N is an N-channel power MOSFET featuring high-voltage PowerTrench technology, optimized for power management applications.
collect：0
IRF9Z34N(UMW)
P-channel power MOSFET featuring low on-resistance and high current capability, suitable for power switching and power management applications.
collect：0
IRFB7437PBF(UMW)
IRFB7437PBF(UMW) is a 40V, 195A N-channel MOSFET featuring ultra-low RDS(ON) below 2mΩ for high-current power switching applications.
collect：0
NTD5867NLT4G(UMW)
NTD5867NLT4G(UMW) is a 60V, 20A N-channel MOSFET featuring low RDS(ON) and high current capability for efficient power switching.
collect：0