OmniChip Technology
  • NCE30TD60BD
  • NCE30TD60BD
  • NCE30TD60BD
  • NCE30TD60BD
  • NCE30TD60BD
  • NCE30TD60BD
  • NCE30TD60BD
  • NCE30TD60BD
  • NCE30TD60BD
  • NCE30TD60BD

NCE30TD60BD

NCE30TD60BD 600V Trench FS II IGBT features low conduction loss, fast switching, high efficiency and reliable parallel operation for industrial power systems.

  • IGBT Technology:Field Stop (FS)
  • Power Dissipation (Pd):190W
  • Collector-Emitter Breakdown Voltage (VCES):600V
  • Continuous Collector Current (IC):60V
  • Pulsed Collector Current (ICM):90A
  • Package:TO-263
  • Package Type:Tape&Reel

USD 2.1

1000

contact shop

Supplier Information

Email:[email protected]

Tel:15670610275

Recommended products

FDN327N(UMW)

FDN327N is an N-channel power MOSFET featuring high-voltage PowerTrench technology, optimized for power management applications.

collect:0

IRF9Z34N(UMW)

P-channel power MOSFET featuring low on-resistance and high current capability, suitable for power switching and power management applications.

collect:0

IRFB7437PBF(UMW)

IRFB7437PBF(UMW) is a 40V, 195A N-channel MOSFET featuring ultra-low RDS(ON) below 2mΩ for high-current power switching applications.

collect:0

NTD5867NLT4G(UMW)

NTD5867NLT4G(UMW) is a 60V, 20A N-channel MOSFET featuring low RDS(ON) and high current capability for efficient power switching.

collect:0