Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
NCE15TD60BD
NCE 600V Trench FS II IGBT features proprietary trench technology, advanced Field Stop II design, low conduction loss, fast switching and reliable parallel operation.
- IGBT Technology：Field Stop (FS)
- Power Dissipation (Pd)：105W
- Collector-Emitter Breakdown Voltage (VCES)：600V
- Continuous Collector Current (IC)：30A
- Pulsed Collector Current (ICM)：1.9V@15A,15V
- Package：TO-263
- Packaging Type：Tape&Reel
USD 1.1
1100
Supplier Information
Email：[email protected]
Tel：15670610275
Recommended products
FDN327N(UMW)
FDN327N is an N-channel power MOSFET featuring high-voltage PowerTrench technology, optimized for power management applications.
collect：0
IRF9Z34N(UMW)
P-channel power MOSFET featuring low on-resistance and high current capability, suitable for power switching and power management applications.
collect：0
IRFB7437PBF(UMW)
IRFB7437PBF(UMW) is a 40V, 195A N-channel MOSFET featuring ultra-low RDS(ON) below 2mΩ for high-current power switching applications.
collect：0
NTD5867NLT4G(UMW)
NTD5867NLT4G(UMW) is a 60V, 20A N-channel MOSFET featuring low RDS(ON) and high current capability for efficient power switching.
collect：0