GuaranTee Supplier
11 Years
MSG20T65HPE0
Trench FS IGBT features low gate charge, 1.6V typical VCE(sat), RoHS compliance and high efficiency for general-purpose inverters and UPS applications.
- IGBT Technology:Field Stop (FS)
- Power Dissipation (Pd):162 W
- Collector-Emitter Breakdown Voltage (VCES):650 V
- Continuous Collector Current (IC):20A
- Collector-Emitter Saturation Voltage (VCE(sat)):2.0 V @ IC=20 A, VGE=15 V
- Gate-Emitter Threshold Voltage (VGE(th)):4.5 V @ IG=250 μA
- Package:TO-263
- Packaging Type:Tape&Reel
USD 0.9
200
Supplier Information
Email:[email protected]
Tel:15670610275
Recommended products
MMDT3904
MMDT3904 is an NPN transistor with an epitaxial planar die structure, designed for low-power amplification and switching applications.
collect:0
SS8550(RANGE:200-350)
SS8550 is a PNP transistor with 200–350 hFE and high collector current, complementary to SS8050 for switching, amplification and power control applications.
collect:0
BC847(RANGE:200-450)
BC847 is an NPN transistor with 200–450 hFE, suitable for automatic insertion, switching and audio amplifier applications.
collect:0
SS8550(RANGE:120-200)
SS8550 is a 25V 1.5A PNP transistor with 120–200 hFE, suitable for general-purpose switching, amplification and high-current electronic applications.
collect:0









