Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
MSG20T65FQS
Trench FS IGBT, Field Stop IGBT, Trench Gate IGBT, Low Gate Charge, 1.6V VCE(sat), Low Saturation Voltage, RoHS Compliant IGBT
- IGBT Technology：Field Stop (FS)
- Power Dissipation (Pd)：35 W
- Collector-Emitter Breakdown Voltage (VCES)：650 V
- Continuous Collector Current (IC)：20 A
- Collector-Emitter Saturation Voltage (VCE(sat))：2.0 V @ IC = 20 A, VGE = 15 V
- Gate-Emitter Threshold Voltage (VGE(th))：4.5 V @ IG = 250 μA
- Package：TO-220F
- Packaging Type：Tube
USD 1.3
150
Supplier Information
Email：[email protected]
Tel：15670610275
Recommended products
FDN327N(UMW)
FDN327N is an N-channel power MOSFET featuring high-voltage PowerTrench technology, optimized for power management applications.
collect：0
IRF9Z34N(UMW)
P-channel power MOSFET featuring low on-resistance and high current capability, suitable for power switching and power management applications.
collect：0
IRFB7437PBF(UMW)
IRFB7437PBF(UMW) is a 40V, 195A N-channel MOSFET featuring ultra-low RDS(ON) below 2mΩ for high-current power switching applications.
collect：0
NTD5867NLT4G(UMW)
NTD5867NLT4G(UMW) is a 60V, 20A N-channel MOSFET featuring low RDS(ON) and high current capability for efficient power switching.
collect：0