OmniChip Technology
  • MSG20T65FQS
  • MSG20T65FQS
  • MSG20T65FQS
  • MSG20T65FQS
  • MSG20T65FQS
  • MSG20T65FQS
  • MSG20T65FQS
  • MSG20T65FQS
  • MSG20T65FQS
  • MSG20T65FQS

MSG20T65FQS

Trench FS IGBT, Field Stop IGBT, Trench Gate IGBT, Low Gate Charge, 1.6V VCE(sat), Low Saturation Voltage, RoHS Compliant IGBT

  • IGBT Technology:Field Stop (FS)
  • Power Dissipation (Pd):35 W
  • Collector-Emitter Breakdown Voltage (VCES):650 V
  • Continuous Collector Current (IC):20 A
  • Collector-Emitter Saturation Voltage (VCE(sat)):2.0 V @ IC = 20 A, VGE = 15 V
  • Gate-Emitter Threshold Voltage (VGE(th)):4.5 V @ IG = 250 μA
  • Package:TO-220F
  • Packaging Type:Tube

USD 1.3

150

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Supplier Information

Email:[email protected]

Tel:15670610275

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