GuaranTee Supplier
11 Years
MSG30T65FT
650V 30A TO-220 IGBT delivers reliable switching performance and high efficiency for motor drives, inverters, UPS systems and industrial power applications.
- IGBT Technology:Field Stop (FS)
- Power Dissipation (Pd):156 W
- Collector-Emitter Breakdown Voltage (VCES):650 V
- Continuous Collector Current (IC):60 A
- Pulsed Collector Current (ICM):120 A
- Collector-Emitter Saturation Voltage (VCE(sat)):2.1 V @ IC = 30 A, VGE = 15 V
- Package:TO-220
- Packaging Type:Tube
USD 1.5
14
Supplier Information
Email:[email protected]
Tel:15670610275
Recommended products
MMDT3904
MMDT3904 is an NPN transistor with an epitaxial planar die structure, designed for low-power amplification and switching applications.
collect:0
SS8550(RANGE:200-350)
SS8550 is a PNP transistor with 200–350 hFE and high collector current, complementary to SS8050 for switching, amplification and power control applications.
collect:0
BC847(RANGE:200-450)
BC847 is an NPN transistor with 200–450 hFE, suitable for automatic insertion, switching and audio amplifier applications.
collect:0
SS8550(RANGE:120-200)
SS8550 is a 25V 1.5A PNP transistor with 120–200 hFE, suitable for general-purpose switching, amplification and high-current electronic applications.
collect:0









