Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
HE25R120H6DHU
1200V 25A IGBT in TO-263 top-side cooling package delivers efficient 10–20kHz switching for inverters, motor drives and industrial power applications.
- IGBT Technology：Field Stop (FS)
- Power Dissipation (Pd)：469 W
- Collector-Emitter Breakdown Voltage (VCES)：1200 V
- Continuous Collector Current (IC)：25 A
- Pulsed Collector Current (ICM)：50 A*
- Collector-Emitter Cutoff Current (ICES)：50 μA
- Package：TSC-263-4L
- Packaging Type：Tape&Reel
USD 1.3
120
Supplier Information
Email：[email protected]
Tel：15670610275
Recommended products
FDN327N(UMW)
FDN327N is an N-channel power MOSFET featuring high-voltage PowerTrench technology, optimized for power management applications.
collect：0
IRF9Z34N(UMW)
P-channel power MOSFET featuring low on-resistance and high current capability, suitable for power switching and power management applications.
collect：0
IRFB7437PBF(UMW)
IRFB7437PBF(UMW) is a 40V, 195A N-channel MOSFET featuring ultra-low RDS(ON) below 2mΩ for high-current power switching applications.
collect：0
NTD5867NLT4G(UMW)
NTD5867NLT4G(UMW) is a 60V, 20A N-channel MOSFET featuring low RDS(ON) and high current capability for efficient power switching.
collect：0