Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
BSS138
BSS138, N-Channel MOSFET, MOSFET Transistor, Communication Modules, Industrial Control, Artificial Intelligence, AI Equipment, Consumer Electronics
- Drain-Source Voltage (VDS)：50 V
- Channel Configuration：Single N-Channel
- Continuous Drain Current (ID)：340 mA
- On-Resistance (RDS(on))：1.1 Ω @ VGS = 10 V; 2 Ω @ VGS = 4.5 V
- Power Dissipation (Pd)：500 mW
- Gate-Source Threshold Voltage (VGS(th))：1.2 V
- Package ：SOT-23
- Packaging Type：Tape&Reel
USD 0.02
51540
Supplier Information
Email：[email protected]
Tel：15670610275
Recommended products
FDN327N(UMW)
FDN327N is an N-channel power MOSFET featuring high-voltage PowerTrench technology, optimized for power management applications.
collect：0
IRF9Z34N(UMW)
P-channel power MOSFET featuring low on-resistance and high current capability, suitable for power switching and power management applications.
collect：0
IRFB7437PBF(UMW)
IRFB7437PBF(UMW) is a 40V, 195A N-channel MOSFET featuring ultra-low RDS(ON) below 2mΩ for high-current power switching applications.
collect：0
NTD5867NLT4G(UMW)
NTD5867NLT4G(UMW) is a 60V, 20A N-channel MOSFET featuring low RDS(ON) and high current capability for efficient power switching.
collect：0