Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
MDD3415
MOSFET featuring low RDS(on), low gate charge and low gate voltage, optimized for load switching and PWM applications with high efficiency and reliable performance.
- Channel Configuration：Single P-Channel
- Drain-Source Voltage (VDS)：20 V
- Continuous Drain Current (ID)：4.8 A
- On-Resistance (RDS(on))：37 mΩ @ VGS = 4.5 V
- Power Dissipation (Pd)：1.5 W
- Gate-Source Threshold Voltage (VGS(th))：400 mV
- Total Gate Charge (Qg)：14.2 nC @ VGS = 4.5 V
- Package：SOT-23
- Packaging Type：Tape&Reel
USD 0.04
429500
Supplier Information
Email：[email protected]
Tel：15670610275
Recommended products
FDN327N(UMW)
FDN327N is an N-channel power MOSFET featuring high-voltage PowerTrench technology, optimized for power management applications.
collect：0
IRF9Z34N(UMW)
P-channel power MOSFET featuring low on-resistance and high current capability, suitable for power switching and power management applications.
collect：0
IRFB7437PBF(UMW)
IRFB7437PBF(UMW) is a 40V, 195A N-channel MOSFET featuring ultra-low RDS(ON) below 2mΩ for high-current power switching applications.
collect：0
NTD5867NLT4G(UMW)
NTD5867NLT4G(UMW) is a 60V, 20A N-channel MOSFET featuring low RDS(ON) and high current capability for efficient power switching.
collect：0