GuaranTee Supplier
11 Years
MDD3415
MOSFET featuring low RDS(on), low gate charge and low gate voltage, optimized for load switching and PWM applications with high efficiency and reliable performance.
- Channel Configuration:Single P-Channel
- Drain-Source Voltage (VDS):20 V
- Continuous Drain Current (ID):4.8 A
- On-Resistance (RDS(on)):37 mΩ @ VGS = 4.5 V
- Power Dissipation (Pd):1.5 W
- Gate-Source Threshold Voltage (VGS(th)):400 mV
- Total Gate Charge (Qg):14.2 nC @ VGS = 4.5 V
- Package:SOT-23
- Packaging Type:Tape&Reel
USD 0.04
429500
Supplier Information
Email:[email protected]
Tel:15670610275
Recommended products
MMDT3904
MMDT3904 is an NPN transistor with an epitaxial planar die structure, designed for low-power amplification and switching applications.
collect:0
SS8550(RANGE:200-350)
SS8550 is a PNP transistor with 200–350 hFE and high collector current, complementary to SS8050 for switching, amplification and power control applications.
collect:0
BC847(RANGE:200-450)
BC847 is an NPN transistor with 200–450 hFE, suitable for automatic insertion, switching and audio amplifier applications.
collect:0
SS8550(RANGE:120-200)
SS8550 is a 25V 1.5A PNP transistor with 120–200 hFE, suitable for general-purpose switching, amplification and high-current electronic applications.
collect:0









