GuaranTee Supplier
11 Years
MDD3415
MOSFET featuring low RDS(on), low gate charge and low gate voltage, optimized for load switching and PWM applications with high efficiency and reliable performance.
- Channel Configuration:Single P-Channel
- Drain-Source Voltage (VDS):20 V
- Continuous Drain Current (ID):4.8 A
- On-Resistance (RDS(on)):37 mΩ @ VGS = 4.5 V
- Power Dissipation (Pd):1.5 W
- Gate-Source Threshold Voltage (VGS(th)):400 mV
- Total Gate Charge (Qg):14.2 nC @ VGS = 4.5 V
- Package:SOT-23
- Packaging Type:Tape&Reel
USD 0.04
429500
Supplier Information
Email:[email protected]
Tel:15670610275
Recommended products
IRLML9301TR(UMW)
IRLML9301TR is a trench MOSFET featuring low RDS(on), low gate charge, and 2.5V gate drive capability, ideal for load switching applications.
collect:0
IRFR5505TR(UMW)
IRFR5505TR is a -60V P-channel trench MOSFET rated at -10A, featuring low RDS(on), low gate charge, and 4.5V gate drive capability.
collect:0
2N7002B
2N7002B is an N-channel MOSFET featuring low RDS(on), high saturation current capability, and reliable voltage-controlled switching for portable load switches and DC/DC converters.
collect:0
STP4925A(UMW)
STP4925A is a dual P-channel logic-level power MOSFET featuring DMOS trench technology and low RDS(on) for efficient power switching.
collect:0









