OmniChip Technology
  • MDDG04R06Q
  • MDDG04R06Q
  • MDDG04R06Q
  • MDDG04R06Q
  • MDDG04R06Q
  • MDDG04R06Q
  • MDDG04R06Q
  • MDDG04R06Q
  • MDDG04R06Q
  • MDDG04R06Q

MDDG04R06Q

MDDG04R06Q is an N-channel enhancement-mode MOSFET featuring advanced power trench and shielded gate technology, ideal for synchronous rectification and motor drive applications.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):40V
  • Continuous Drain Current (ID):60A
  • On-Resistance (RDS(on)):4.5mΩ@10V
  • Gate-Source Threshold Voltage (VGS(th)):1.35V
  • Total Gate Charge (Qg):17nC
  • Package:PDFN-8L(3x3)
  • Packaging Type:Tape&Reel

USD 0.1

3300

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Supplier Information

Email:[email protected]

Tel:15670610275

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