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OmniChip Technology
GuaranTee Supplier
11 Years
MDDG06R10Q
MDDG06R10Q is an N-channel enhancement-mode MOSFET featuring advanced power trench and shielded gate technology for high-efficiency, low-loss switching performance.
- Channel Configuration：Single N-Channel
- Drain-Source Voltage (VDS)：60 V
- Continuous Drain Current (ID)：50 A
- On-Resistance (RDS(on))：8 mΩ @ VGS = 10 V
- Power Dissipation (Pd)：35 W
- Gate-Source Threshold Voltage (VGS(th))：1.7 V
- Package：PDFN-8L(3x3)
- Packaging Type：Tape&Reel
USD 0.2
3650
Supplier Information
Email：[email protected]
Tel：15670610275
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