OmniChip Technology
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D

MDD68N10D

MDD68N10D is an N-channel enhancement-mode power MOSFET with optimized RDS(on), excellent switching performance, and a soft body diode for efficient power applications.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):60 V
  • Continuous Drain Current (ID):50 A
  • On-Resistance (RDS(on)):8 mΩ @ VGS = 10 V
  • Power Dissipation (Pd):35 W
  • Gate-Source Threshold Voltage (VGS(th)):1.7 V
  • Package:TO-252
  • Packaging Type:Tape&Reel

USD 0.4

2000

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Supplier Information

Email:[email protected]

Tel:15670610275

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