Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
MDDG10R08D
MDDG10R08D is an N-channel MV MOSFET with advanced trench and shielded gate technology, optimized for low RDS(on), excellent switching performance, and a soft body diode.
- Channel Configuration：Single N-Channel
- Drain-Source Voltage (VDS)：100V
- Continuous Drain Current (ID)：75A
- On-Resistance (RDS(on))：6.5mΩ@10V
- Power Dissipation (Pd)：100W
- Gate-Source Threshold Voltage (VGS(th))：2V
- Package：TO-252
- Packaging Type：Tape&Reel
USD 0.3
2000
Supplier Information
Email：[email protected]
Tel：15670610275
Recommended products
FDN327N(UMW)
FDN327N is an N-channel power MOSFET featuring high-voltage PowerTrench technology, optimized for power management applications.
collect：0
IRF9Z34N(UMW)
P-channel power MOSFET featuring low on-resistance and high current capability, suitable for power switching and power management applications.
collect：0
IRFB7437PBF(UMW)
IRFB7437PBF(UMW) is a 40V, 195A N-channel MOSFET featuring ultra-low RDS(ON) below 2mΩ for high-current power switching applications.
collect：0
NTD5867NLT4G(UMW)
NTD5867NLT4G(UMW) is a 60V, 20A N-channel MOSFET featuring low RDS(ON) and high current capability for efficient power switching.
collect：0