GuaranTee Supplier
11 Years
MDDG10R04P
MDDG10R04P is a 100V 130A N-channel power MOSFET with ultra-low 3.2mΩ RDS(on), delivering high-current capability and efficient switching for power applications.
- Channel Configuration:Single N-Channel
- Drain-Source Voltage (VDS):100V
- Continuous Drain Current (ID):130A
- On-Resistance (RDS(on)):4.4mΩ@10V
- Power Dissipation (Pd):150W
- Gate-Source Threshold Voltage (VGS(th)):4V
- Package:TO-220C-3L
- Packaging Type:Tube
USD 0.7
540
Supplier Information
Email:[email protected]
Tel:15670610275
Recommended products
MMDT3904
MMDT3904 is an NPN transistor with an epitaxial planar die structure, designed for low-power amplification and switching applications.
collect:0
SS8550(RANGE:200-350)
SS8550 is a PNP transistor with 200–350 hFE and high collector current, complementary to SS8050 for switching, amplification and power control applications.
collect:0
BC847(RANGE:200-450)
BC847 is an NPN transistor with 200–450 hFE, suitable for automatic insertion, switching and audio amplifier applications.
collect:0
SS8550(RANGE:120-200)
SS8550 is a 25V 1.5A PNP transistor with 120–200 hFE, suitable for general-purpose switching, amplification and high-current electronic applications.
collect:0









