OmniChip Technology
  • MDD60N02D
  • MDD60N02D
  • MDD60N02D
  • MDD60N02D
  • MDD60N02D
  • MDD60N02D
  • MDD60N02D
  • MDD60N02D
  • MDD60N02D
  • MDD60N02D

MDD60N02D

MDD60N02D is a high-efficiency power MOSFET featuring high current capability, high reliability, strong surge current capability, and low power consumption.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):20V
  • Continuous Drain Current (ID):60A
  • On-Resistance (RDS(on)):4.9mΩ@4.5V
  • Gate-Source Threshold Voltage (VGS(th)):650mV
  • Total Gate Charge (Qg):28nC
  • Package:TO-252
  • Packaging Type:Tape&Reel

USD 0.1

2400

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Supplier Information

Email:[email protected]

Tel:15670610275

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