Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
SI2318A
SI2318A is a 40V N-channel MOSFET featuring advanced trench technology, low RDS(on), and low gate charge for high-efficiency power switching applications.
- Channel Configuration：Single Channel
- Drain-Source Voltage (VDS)：40V
- Continuous Drain Current (ID)：5.6A
- Drain-Source On-Resistance (RDS(on))：36mΩ@10V；46mΩ@4.5V
- Power Dissipation (PD)：2.1W
- Gate Threshold Voltage (VGS(th))：2.5V
- Package：SOT-23
- Packaging Type：Tape&Reel
USD 0.06
88000
Supplier Information
Email：[email protected]
Tel：15670610275
Recommended products
FDN327N(UMW)
FDN327N is an N-channel power MOSFET featuring high-voltage PowerTrench technology, optimized for power management applications.
collect：0
IRF9Z34N(UMW)
P-channel power MOSFET featuring low on-resistance and high current capability, suitable for power switching and power management applications.
collect：0
IRFB7437PBF(UMW)
IRFB7437PBF(UMW) is a 40V, 195A N-channel MOSFET featuring ultra-low RDS(ON) below 2mΩ for high-current power switching applications.
collect：0
NTD5867NLT4G(UMW)
NTD5867NLT4G(UMW) is a 60V, 20A N-channel MOSFET featuring low RDS(ON) and high current capability for efficient power switching.
collect：0