GuaranTee Supplier
11 Years
SI2310A
SI2310A is a 60V N-channel MOSFET with low RDS(on), delivering efficient switching performance for load power switch and interface applications.
- Channel Configuration:Single N-Channel
- Drain-Source Voltage (VDS):60V
- Continuous Drain Current (ID):3A
- Drain-Source On-Resistance (RDS(on)):80mΩ@10V
- Power Dissipation (PD):1.38W
- Gate Threshold Voltage (VGS(th)):3V
- Package:SOT-23
- Packaging Type:Tape&Reel
USD 0.04
9800
Supplier Information
Email:[email protected]
Tel:15670610275
Recommended products
MMDT3904
MMDT3904 is an NPN transistor with an epitaxial planar die structure, designed for low-power amplification and switching applications.
collect:0
SS8550(RANGE:200-350)
SS8550 is a PNP transistor with 200–350 hFE and high collector current, complementary to SS8050 for switching, amplification and power control applications.
collect:0
BC847(RANGE:200-450)
BC847 is an NPN transistor with 200–450 hFE, suitable for automatic insertion, switching and audio amplifier applications.
collect:0
SS8550(RANGE:120-200)
SS8550 is a 25V 1.5A PNP transistor with 120–200 hFE, suitable for general-purpose switching, amplification and high-current electronic applications.
collect:0









