Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
SI2307A
SI2307A features advanced trench technology with low RDS(on) and low gate charge, making it suitable for load switch and PWM applications with high efficiency.
- Channel Configuration：Single P-Channel
- Drain-Source Voltage (VDS)：30V
- Continuous Drain Current (ID)：3A
- Drain-Source On-Resistance (RDS(on))：50mΩ @ VGS = 10V; 70mΩ @ VGS = 4.5V
- Power Dissipation (PD)：1.25W
- Gate Threshold Voltage (VGS(th))：3V
- Package：SOT-23
- Packaging Type：Tape&Reel
USD 0.05
44000
Supplier Information
Email：[email protected]
Tel：15670610275
Recommended products
FDN327N(UMW)
FDN327N is an N-channel power MOSFET featuring high-voltage PowerTrench technology, optimized for power management applications.
collect：0
IRF9Z34N(UMW)
P-channel power MOSFET featuring low on-resistance and high current capability, suitable for power switching and power management applications.
collect：0
IRFB7437PBF(UMW)
IRFB7437PBF(UMW) is a 40V, 195A N-channel MOSFET featuring ultra-low RDS(ON) below 2mΩ for high-current power switching applications.
collect：0
NTD5867NLT4G(UMW)
NTD5867NLT4G(UMW) is a 60V, 20A N-channel MOSFET featuring low RDS(ON) and high current capability for efficient power switching.
collect：0