OmniChip Technology
  • NDC7002N
  • NDC7002N
  • NDC7002N
  • NDC7002N
  • NDC7002N
  • NDC7002N
  • NDC7002N
  • NDC7002N
  • NDC7002N
  • NDC7002N

NDC7002N

NDC7002N is a dual N-channel enhancement MOSFET built with high-density DMOS technology, offering low RDS(on), fast switching, and reliable performance.

  • Channel Configuration:Dual N-Channel
  • Drain-Source Voltage (VDS):50V
  • Continuous Drain Current (ID):510mA
  • Drain-Source On-Resistance (RDS(on)):1Ω@10V
  • Power Dissipation (PD):960mW
  • Gate Threshold Voltage (VGS(th)):1.9V
  • Package:SOT-23-6
  • Packaging Type:Tape&Reel

USD 0.2

60000

contact shop

Supplier Information

Email:[email protected]

Tel:15670610275

Recommended products

FDN327N(UMW)

FDN327N is an N-channel power MOSFET featuring high-voltage PowerTrench technology, optimized for power management applications.

collect:0

IRF9Z34N(UMW)

P-channel power MOSFET featuring low on-resistance and high current capability, suitable for power switching and power management applications.

collect:0

IRFB7437PBF(UMW)

IRFB7437PBF(UMW) is a 40V, 195A N-channel MOSFET featuring ultra-low RDS(ON) below 2mΩ for high-current power switching applications.

collect:0

NTD5867NLT4G(UMW)

NTD5867NLT4G(UMW) is a 60V, 20A N-channel MOSFET featuring low RDS(ON) and high current capability for efficient power switching.

collect:0