OmniChip Technology
  • AO4447A
  • AO4447A
  • AO4447A
  • AO4447A
  • AO4447A
  • AO4447A
  • AO4447A
  • AO4447A
  • AO4447A
  • AO4447A

AO4447A

AO4447A is a -30V P-channel trench power MOSFET with ultra-low RDS(on), ESD protection, and RoHS/halogen-free compliance for efficient power switching.

  • Channel Configuration:Single P-Channel
  • Drain-Source Voltage (VDS):30V
  • Continuous Drain Current (ID):18.5A
  • Drain-Source On-Resistance (RDS(on)):4.7mΩ @ VGS = 10V; 6.3mΩ @ VGS = 4.5V
  • Power Dissipation (PD):3.1W
  • Gate Threshold Voltage (VGS(th)):1.7V
  • Package:SOP-8
  • Packaging:Tape&Reel

USD 0.2

7000

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Supplier Information

Email:[email protected]

Tel:15670610275

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