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OmniChip Technology
GuaranTee Supplier
11 Years
SI2323DS
SI2323DS is a -30V P-channel MOSFET with low RDS(on), optimized for high-efficiency load switch and power amplifier (PA) switching applications.
- Channel Configuration：Single P-Channel
- Drain-Source Voltage (VDS)：30V
- Continuous Drain Current (ID)：4.2A
- Drain-Source On-Resistance (RDS(on))：50mΩ @ VGS = 10V; 65mΩ @ VGS = 4.5V
- Power Dissipation (PD)：1.4W
- Gate Threshold Voltage (VGS(th))：400mV
- Package：SOT-23
- Packaging Type：Tape&Reel
USD 0.05
11200
Supplier Information
Email：[email protected]
Tel：15670610275
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