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OmniChip Technology
GuaranTee Supplier
11 Years
CJAC80SN10
Shielded Gate Trench MOSFET, Advanced Trench Technology, Low RDS(ON), Low On-Resistance, Low Gate Charge, Fast Switching, Power MOSFET, High Efficiency, Power Switching
- Channel Configuration：Single N-Channel
- Drain-Source Voltage (VDS)：100V
- Continuous Drain Current (ID)：80A
- Drain-Source On-Resistance (RDS(on))：10.5mΩ@4.5V
- Power Dissipation (PD)：100W
- Gate Threshold Voltage (VGS(th))：2.5V
- Package：PDFNWB5x6-8L
- Packaging Type：Tape&Reel
USD 0.08
6100
Supplier Information
Email：[email protected]
Tel：15670610275
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