OmniChip Technology
  • CJU30P10A
  • CJU30P10A
  • CJU30P10A
  • CJU30P10A
  • CJU30P10A
  • CJU30P10A
  • CJU30P10A
  • CJU30P10A
  • CJU30P10A
  • CJU30P10A

CJU30P10A

CJU30P10A uses advanced trench MOSFET technology to deliver excellent RDS(on) with low gate charge, making it suitable for various power switching applications.

  • Channel Configuration:Single P-Channel
  • Drain-Source Voltage (VDS):100V
  • Continuous Drain Current (ID):30A
  • Drain-Source On-Resistance (RDS(on)):52mΩ@4.5V
  • Power Dissipation (PD):89W
  • Gate Threshold Voltage (VGS(th)):1.5V
  • Package:TO-252-2L
  • Packaging Type:Tape&Reel

USD 0.5

700

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Supplier Information

Email:[email protected]

Tel:15670610275

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