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OmniChip Technology
GuaranTee Supplier
11 Years
CJT03P10
CJT03P10 uses advanced trench MOSFET technology to deliver excellent RDS(ON) with low gate charge, making it suitable for a wide range of switching applications.
- Channel Configuration：Single N-Channel
- Drain-Source Voltage (VDS)：100V
- Continuous Drain Current (ID)：3A
- Drain-Source On-Resistance (RDS(on)) ：190mΩ@10V
- Power Dissipation (PD)：3.1w
- Gate Threshold Voltage (VGS(th))：3V
- Package：SOT-223
- Packaging Type：Tape&Reel
USD 0.3
1100
Supplier Information
Email：[email protected]
Tel：15670610275
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