Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
CJAC110SN10H
CJAC110SN10H uses shielded-gate trench MOSFET technology to provide excellent RDS(ON) and low gate charge, supporting efficient switching across various applications.
- Channel Configuration：Single N-Channel
- Drain-Source Voltage (VDS)：100V
- Continuous Drain Current (ID)：110A
- Drain-Source On-Resistance (RDS(on))：5.2mΩ@10V
- Power Dissipation (PD)：130W
- Gate Threshold Voltage (VGS(th))：4V
- Package：PDFNWB5x6-8L
- Packaging Type：Tape&Reel
USD 0.9
2900
Supplier Information
Email：[email protected]
Tel：15670610275
Recommended products
IRLML9301TR(UMW)
IRLML9301TR is a trench MOSFET featuring low RDS(on), low gate charge, and 2.5V gate drive capability, ideal for load switching applications.
collect：0
IRFR5505TR(UMW)
IRFR5505TR is a -60V P-channel trench MOSFET rated at -10A, featuring low RDS(on), low gate charge, and 4.5V gate drive capability.
collect：0
2N7002B
2N7002B is an N-channel MOSFET featuring low RDS(on), high saturation current capability, and reliable voltage-controlled switching for portable load switches and DC/DC converters.
collect：0
STP4925A(UMW)
STP4925A is a dual P-channel logic-level power MOSFET featuring DMOS trench technology and low RDS(on) for efficient power switching.
collect：0