OmniChip Technology
  • CJAB20N03
  • CJAB20N03
  • CJAB20N03
  • CJAB20N03
  • CJAB20N03
  • CJAB20N03
  • CJAB20N03
  • CJAB20N03
  • CJAB20N03
  • CJAB20N03

CJAB20N03

CJAB20N03 uses advanced trench MOSFET technology to deliver excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):30V
  • Continuous Drain Current (ID):20A
  • Drain-Source On-Resistance (RDS(on)):8.5mΩ@10V
  • Power Dissipation (PD):1.5W
  • Gate Threshold Voltage (VGS(th)) :3V
  • Package:PDFNWB3.3x3.3-8L
  • Packaging Type:Tape&Reel

USD 0.2

3700

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Supplier Information

Email:[email protected]

Tel:15670610275

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