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OmniChip Technology
GuaranTee Supplier
11 Years
CJAB3R9SN04C
CJAB3R9SN04C is an N-channel enhancement power MOSFET using SGT technology for low RDS(ON), excellent switching, and high-energy pulse handling in avalanche and commutation modes.
- Channel Configuration：Single N-Channel
- Drain-Source Voltage (VDS)：40V
- Continuous Drain Current (ID)：70A
- Drain-Source On-Resistance (RDS(on))：4.3mΩ@4.5V
- Power Dissipation (PD)：50W
- Gate Threshold Voltage (VGS(th)) ：2.5V
- Package：PDFNWB3.3x3.3-8L
- Packaging Type：Tape&Reel
USD 0.3
35
Supplier Information
Email：[email protected]
Tel：15670610275
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