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OmniChip Technology
GuaranTee Supplier
11 Years
CJAE2002
CJAE2002 uses advanced trench MOSFET technology with excellent RDS(ON), low gate charge and ESD protection, featuring a common-drain configuration for unidirectional or bidirection
- Channel Configuration：Dual N-Channel
- Drain-Source Voltage (VDS)：18V
- Continuous Drain Current (ID)：15A
- Drain-Source On-Resistance (RDS(on))：4.4mΩ@4.5V
- Power Dissipation (PD)：3W
- Gate Threshold Voltage (VGS(th)) ：1V
- Package：TDFN-8-EP(3x3)
- Packaging Type：Tape&Reel
USD 0.3
2600
Supplier Information
Email：[email protected]
Tel：15670610275
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