GuaranTee Supplier
11 Years
CJU02N60M1
CJU02N60M1 is a high-voltage MOSFET with advanced termination, high avalanche and commutation energy capability, and a fast-recovery drain-source diode for efficient switching.
- Channel Configuration:Single N-Channel
- Drain-Source Voltage (VDS):600V
- Continuous Drain Current (ID):2A
- Drain-Source On-Resistance (RDS(on)):3.7Ω@10V
- Power Dissipation (PD):31W
- Gate Threshold Voltage (VGS(th)) :4V
- Package:TO-252-2L
- Packaging Type:Tape&Reel
USD 0.2
1300
Supplier Information
Email:[email protected]
Tel:15670610275
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