OmniChip Technology
  • CXT5551(RANGE:120-180)
  • CXT5551(RANGE:120-180)
  • CXT5551(RANGE:120-180)
  • CXT5551(RANGE:120-180)
  • CXT5551(RANGE:120-180)
  • CXT5551(RANGE:120-180)
  • CXT5551(RANGE:120-180)
  • CXT5551(RANGE:120-180)
  • CXT5551(RANGE:120-180)
  • CXT5551(RANGE:120-180)

CXT5551(RANGE:120-180)

CXT5551 is a high-voltage NPN transistor with 120–180 hFE, 600mA collector current and 180V voltage rating for high-voltage switching and amplification.

  • Transistor Polarity:NPN
  • Collector Current (Ic):600mA
  • Collector-Emitter Breakdown Voltage (Vceo):160V
  • Power Dissipation (Pd):500mW
  • DC Current Gain (hFE):120
  • Transition Frequency (fT):100MHz
  • Package:SOT-89-3L
  • Packaging Type:Tape&Reel

USD 0.05

40000

contact shop

Supplier Information

Email:[email protected]

Tel:15670610275

Recommended products

IRLML9301TR(UMW)

IRLML9301TR is a trench MOSFET featuring low RDS(on), low gate charge, and 2.5V gate drive capability, ideal for load switching applications.

collect:0

IRFR5505TR(UMW)

IRFR5505TR is a -60V P-channel trench MOSFET rated at -10A, featuring low RDS(on), low gate charge, and 4.5V gate drive capability.

collect:0

2N7002B

2N7002B is an N-channel MOSFET featuring low RDS(on), high saturation current capability, and reliable voltage-controlled switching for portable load switches and DC/DC converters.

collect:0

STP4925A(UMW)

STP4925A is a dual P-channel logic-level power MOSFET featuring DMOS trench technology and low RDS(on) for efficient power switching.

collect:0